The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs
نویسنده
چکیده
A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory of the ballistic MOSFET is discussed, and finally, the role of scattering in nano-scale MOSFETs is discussed.
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